NonUnear subgap photoconductivity of polycrystamne silicon

Spectroscopic and Optoelectronic Properties of Hydrogenated Amorphous Silicon-Chalcogen Alloys

Hydrogenated amorphous silicon-chalcogen alloy thin films have been the subject of growing interest during the past two decades. Thin films of these alloys are usually prepared by the decomposition of SiH4 and H2S or H2Se gas mixtures in a radiofrequency plasma glow discharge at a substrate temperature of 250°C. The alloy composition is varied by changing the gas volume ratio RV = [chalcogen/ s...

Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Articles you may be interested in Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Appl. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching Appl. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors

Mobility - lifetime estimates in amorphous hydrogenated silicon ( a -

Estimates of the majority photocarrier mobility-lifetime (pt) product obtained from time-of-flight transient photoconductivity and from steady-state photo-conductivity are compared. It is shown that in principle both experiments measure the integral of the transient drift mobility; the demonstration is based solely on linear response theory and is independent of the specific microscopic transpo...

Transient Photoconductivity Decay Measurements of Polymer- Terminated Silicon Surfaces